Varactor Diode

please explain me the construction of Varactor Diode?

do provide me a link for the animated explanation of the same

In any diode under reverse bias (meaning opposite of the direction which conducts a current), there is a non-conducting "depletion region" between the anode and cathode conducting regions. The width of this depletion region varies with the applied reverse voltage (larger voltages make the region wider).
The structure's electrical behavior is exactly like a parallel plate capacitor, where the depletion region is the insulating space between the plates. Capacitance may be calculated using hte parallel plate capacitor formula, where the spacing between the plates is varying under bias voltage changes, creating a varactor.

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Lecture - 11 Varactor Diode

what is varactor diode and tunnel diode?

i want to know why basically these diodes came into existence..what is main diff between pn junction diode,zener diode,varactor diode and tunnel diode

A diode restricts the direction of movement of charge carriers. Essentially, it allows an electric current to flow in one direction, but blocks it in the opposite direction. Most modern diodes are based on semiconductor P-N junctions in which current can flow from the P-type side (the anode) to the N-type.

Initially, the simple p-n diode was used, mostly in power supply circuitry where it permits ac signals to be converted to dc, using diodes and storage/filter capacitors.

As semiconductors became more common, it was discovered that a reverse voltage across the PN junction created a region where there is little current, called the depletion region. Essentially devoid of carriers it behaves as the dielectric of a capacitor, and is variable with voltage. This is a very inexpensive, reliable, component in modern electronics.

Zener diodes provide a valuable voltage clamp, that is they are an open circuit until their voltage breakdown is reached, at which time they limit the voltage. Usually with a current limiting resistor in series, true zener breakdown ends at about 5.6 Volts and the device then has the characteristics of a diode.

A tunnel diode has a negative resistance region that allows very fast switching speeds, up to 5 GH, using a quantum mechanic principle known as "tunneling." The normal diode is effectively an open circuit in the forward direction until the field conditions across the junction are met for ease of conduction, but with the tunnel diode the intrinsic voltage barrier (0.3 Volt for Germanium tunnel diodes and 0.7 Volt for Silicon tunnel diodes junctions) is defeated by high doping levels which enhance tunneling. Such a fast connection speed is invaluable in modern electronics, particularly in decision or logic networks.