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Semiconductor Laser Diode Arrays
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Monolithic Diode-Laser Arrays $79.9 No Synopsis Available |
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Diode Laser Arrays $89.7 No Synopsis Available |
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Laser Diode Microsystems $301.11 Laser Diode Microsystems provides the reader with the basic knowledge and understanding required for using semiconductor laser diodes in optical microsystems and microoptical electromechanic systems. This tutorial addresses the fundamentals of semiconductor laser operation and design, coupled with an overview of the types of laser diodes suitable for use in Microsystems, along with their distinguishing characteristics. Emphasis is placed on laser diode characterization and measurement as well as the assembly techniques and optical accessories required for incorporation of semiconductor lasers into complex microsystems. Equipped with typical results and calculation examples, this handon text helps readers to develop a feel for how to choose a laser diode, characterize it and incorporate it into a microsystem. Author: Zappe, Hans P./ Zappe, H. Series Title: Microtechnology and Mems (Hardcover) Binding Type: Hardcover Number of Pages: 355 Publication Date: 2003/10/10 Language: English Dimensions: 9.21 x 6.14 x 0.81 inches |
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Semiconductor Laser Engineering, Reliability and Diagnostics (Hardcover) $224.98 Practical guidelines to develop high-power, single-spatial mode, edge-emitting diode laser products by using concepts and techniques of the complementary technical areas of device engineering, reliability engineering and device diagnosticsThe book reflects the extensive expertise of the author in the diode-laser field both as a top scientific researcher as well as a key developer of highly reliable devices. The author provides a novel approach to high-power, single-transverse mode diode laser development by addressing the complementary topics of device engineering, reliability engineering and device diagnostics.Provides a comprehensive account of engineering and implementing high-power single transverse mode lasers with a focus on practical guidelines for the use in an industrial environment.Addresses a gap in the current literature between fundamentals and devices.Introduces the basic concepts and techniques of laser reliability engineering.Explains the details of how to set up and operate a typical diode laser reliability test program used in industry for product qualification. |
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Semiconductor Lasers I (Hardcover) $256.23 This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers. The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features.* Introduces the reader to the basics of semiconductor lasers* Covers the fundamentals of lasing in semiconductors, including quantum confined and microcavity structures* Beneficial to readers interested in the more general aspects of semiconductor physics and optoelectronic devices, such as quantum confined heterostructures and integrated optics* Each chapter contains a thorough introduction to the topic geared toward the non-expert, followed by an in-depth discussion of current technology and future trends* Useful for professionals engaged in research and development* Contains numerous schematic and data-containing illustrations |
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High Power Diode Lasers: Technology and Applications $511.65 This book summarizes a five year research project, as well as subsequent results regarding high power diode laser systems and their application in materials processing. The text explores the entire chain of technology, from the semiconductor technology, through cooling mounting and assembly, beam shaping and system technology, to applications in the processing of such materials as metals and polymers. Includes theoretical models, a range of important parameters and practical tips. Author: Bachmann, Friedrich/ Loosen, Peter/ Poprawe, Reinhart Series Title: Springer Series in Optical Sciences Series Number: 128 Binding Type: Paperback Number of Pages: 560 Publication Date: 2010/11/29 Language: English Dimensions: 9.21 x 6.14 x 1.14 inches |
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Shoebox Holography: A Step-By-Step Guide to Making Holograms Using Inexpensive Semiconductor Diode Laser $22.03 No Synopsis Available |
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Study of Laser Diode and Edfa $111.53 This book basically gives the over view about The properties of erbiumdoped fiber amplifier (EDFA) such as gain and noise figure have been studied. By determining the characteristics of the 980nm, 1480nm 1550nm laser sources and ASE (amplified spontaneous emission) at the output of the amplifier used to determine the gain and noise figure of EDFA. This model allows to follow the signal (1550nm), pump (980nm) and ASE as they propagate along the fiber and determine population inversion .The both forward and backward propagation ASE are important in determining the overall gain and noise figure. For the amplification of more than 80 channels the DWDM (Dense Wavelength Division Multiplexing) has required CBand (15251565)nm and LBand (15651610)nm EDFA.We show that a flat gain spectrum can be achieved in the range from 1565 to 1610 nm when the EDF length, pump power and pump configuration are appropriately chosen. Special care must be taken when selecting the EDF length. Author: Kumar, Pankaj/ Kumar, Chakresh/ Chack, Devendra Binding Type: Paperback Number of Pages: 68 Publication Date: 2011/06/19 Language: English Dimensions: 9.02 x 5.98 x 0.16 inches |
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Dime Used to Illustrate Miniature Size of the Diode of an Injection Laser $79.99 Dime Used to Illustrate Miniature Size of the Diode of an Injection Laser - Premium Photographic Print |
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Laser Diode Modulation and Noise $145.28 No Synopsis Available |
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CET Domain 10021910 Playstation 3 Compatible Laser Diode $72.83 Replace your damaged laser diode built for Playstation 3 KEM400AAA and KES400AAA laser lenses. Use and replace your laser diode with precaution. All laser diodes are extremely ESD sensitive. Compatible Models: Playstation 3 compatible KEM400AAA and KES400AAA laser lenses (sold seperately). Note: Installation guide is not included' please look for it online or use the help of an accreditate technician. We will not be responsible for any damage of your device due to improper installation. This item takes between 721 days to ship/arrive because it ships out of Hong Kong or China. |
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Simulation of Ingan Blue Laser Diode $172.06 In this book, the design of InGaN LDs structures including multi quantum wells (MQWs) active region device are described and investigated by integrated system engineering technology computer aided design (ISE TCAD) device simulator. The parameters of the LDs structures are varied and optimized for high performance. This optimization study involves aspects such as thickness of active region, doping, thickness of stopper layer region, thickness of quantum wells and quantum barriers, number of quantum wells and several approaches to improve and achieve high efficiency, low threshold current and high output power of InGaN LDs. The basic LDs structures treated here are FabryPerot type InGaN double heterostructure (DH), separate confinement heterostructure (SCH) and multi quantum wells (MQWs).High performance LD has been obtained by using multi quantum wells incorporated with the optimized parameters. The lowest threshold current, higher external quantum efficiency and characteristic temperature are obtained when the number of InGaN well layers is two, at our laser emission wavelength of 415 nm, which is related to the problem of inhomogeneous carrier. Author: Thahab, Sabah Binding Type: Paperback Number of Pages: 232 Publication Date: 2011/01/31 Language: English Dimensions: 5.98 x 9.00 x 0.53 inches |
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Cet 10021911 Playstation 3 Compatible 410 Series Laser Diode $46.28 Replace your damaged laser diode built in your PlayStation 3 KEM410 and KES410 laser lens. Use and replace your it with precaution as this laser diode is very fragile and extremely ESD sensitive. Compatible Models: Playstation 3 compatible KEM410 and KES410 laser lenses (not included). Note: Installation guide is not included' please look for it online or use the help of an accreditate technician. We will not be responsible for any damage of your device due to improper installation. This item takes between 721 days to ship/arrive because it ships out of Hong Kong or China. |
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R500 650nm 500mw Red laser light, laser diode $195.88 It's widely used in scientific research, laser printing, spectrum analysis, laser show, etc. |
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Diode Laser and Naocl as Root Canal Disinfectant $111.53 Enterococc faecalis considered to be the mostresistant bacteria of the root canal, in the presentstudy we used two types of root canal disinfectant toshow their effect on this type of bacteria, the firstis the diode laser and the second NaOCl solution withspecial concentrations and times. the study conductedon human decoronated extracted teeth, adjusted with13mm root length, filled with a suspension of E.faecalis, Samples were divided into 14 groups eachgroup consisted of 10 prepared roots, sixty sampleswere irrigated with NaOCl solution at differentconcentrations (0.5, 2.5 and 5.25) at twoselected times (2 minutes and 5 minutes) for eachconcentration.Sixty samples were irradiated at different powers (2W, 2.5W and 3W); each power at thetotal irradiation time 30 and 60 seconds. Whencomparison was made between NaOCl irrigant and diodelaser in a combination among differentconcentrations, powers and times the result showedthat 5.25 NaOCl at both 2 minutes and 5 minutes hadthe highest antimicrobial effect with no significantdifferences from 3W laser / 10 sec (6 cycles) butsignificantly different from 3W / 5 sec (6 cycles). Author: Shehab, Najwan F./ Zakaria, Assistant Prof Nawfal a./ Taha, Prof Dr Mahmoud y. Binding Type: Paperback Number of Pages: 104 Publication Date: 2011/07/29 Language: English Dimensions: 9.02 x 5.98 x 0.25 inches |
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