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Semiconductor Diode Forward Biased
Plesae can you help with this elctronics exam question about a pn junction?
Eplain how a silcon p-n junction diode works. Explination should include terms such as valance band; conduction band; bandgap; semiconductor; doping; holes; region of depleted charge carriers; forward bias; reverse bias etc.
I have already read the wiki page - I just would like someone else to put it briefly in their own words if they wouldnt mind. Maybe a few paragraphs, just to help me understand it a little better. thanks
Too much to explain here. Please read here http://en.wikipedia.org/wiki/P%E2%80%93n_junction
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Laser Diode Microsystems $301.11 Laser Diode Microsystems provides the reader with the basic knowledge and understanding required for using semiconductor laser diodes in optical microsystems and microoptical electromechanic systems. This tutorial addresses the fundamentals of semiconductor laser operation and design, coupled with an overview of the types of laser diodes suitable for use in Microsystems, along with their distinguishing characteristics. Emphasis is placed on laser diode characterization and measurement as well as the assembly techniques and optical accessories required for incorporation of semiconductor lasers into complex microsystems. Equipped with typical results and calculation examples, this handon text helps readers to develop a feel for how to choose a laser diode, characterize it and incorporate it into a microsystem. Author: Zappe, Hans P./ Zappe, H. Series Title: Microtechnology and Mems (Hardcover) Binding Type: Hardcover Number of Pages: 355 Publication Date: 2003/10/10 Language: English Dimensions: 9.21 x 6.14 x 0.81 inches |
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Forward $9.49 Forward |
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Modern Semiconductor Devices for Integrated Circuits $54.99 Forcourses in semiconductor devices.Prepare your students for the semiconductor device technologies of today and tomorrow.Modern Semiconductor Devices for Integrated Circuits, First Edition introduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications. Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for both undergraduate and graduate students, and serves as a suitable reference text for practicing engineers. |
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Semiconductor Lasers I (Hardcover) $256.23 This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers. The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features.* Introduces the reader to the basics of semiconductor lasers* Covers the fundamentals of lasing in semiconductors, including quantum confined and microcavity structures* Beneficial to readers interested in the more general aspects of semiconductor physics and optoelectronic devices, such as quantum confined heterostructures and integrated optics* Each chapter contains a thorough introduction to the topic geared toward the non-expert, followed by an in-depth discussion of current technology and future trends* Useful for professionals engaged in research and development* Contains numerous schematic and data-containing illustrations |
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High Power Diode Lasers: Technology and Applications $511.65 This book summarizes a five year research project, as well as subsequent results regarding high power diode laser systems and their application in materials processing. The text explores the entire chain of technology, from the semiconductor technology, through cooling mounting and assembly, beam shaping and system technology, to applications in the processing of such materials as metals and polymers. Includes theoretical models, a range of important parameters and practical tips. Author: Bachmann, Friedrich/ Loosen, Peter/ Poprawe, Reinhart Series Title: Springer Series in Optical Sciences Series Number: 128 Binding Type: Paperback Number of Pages: 560 Publication Date: 2010/11/29 Language: English Dimensions: 9.21 x 6.14 x 1.14 inches |
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Study of Laser Diode and Edfa $111.53 This book basically gives the over view about The properties of erbiumdoped fiber amplifier (EDFA) such as gain and noise figure have been studied. By determining the characteristics of the 980nm, 1480nm 1550nm laser sources and ASE (amplified spontaneous emission) at the output of the amplifier used to determine the gain and noise figure of EDFA. This model allows to follow the signal (1550nm), pump (980nm) and ASE as they propagate along the fiber and determine population inversion .The both forward and backward propagation ASE are important in determining the overall gain and noise figure. For the amplification of more than 80 channels the DWDM (Dense Wavelength Division Multiplexing) has required CBand (15251565)nm and LBand (15651610)nm EDFA.We show that a flat gain spectrum can be achieved in the range from 1565 to 1610 nm when the EDF length, pump power and pump configuration are appropriately chosen. Special care must be taken when selecting the EDF length. Author: Kumar, Pankaj/ Kumar, Chakresh/ Chack, Devendra Binding Type: Paperback Number of Pages: 68 Publication Date: 2011/06/19 Language: English Dimensions: 9.02 x 5.98 x 0.16 inches |
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Are Textbooks Biased? $32.86 No Synopsis Available |
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DIODE $12 When these electrical items fail there is little choice but to renew - With this genuine Suzuki par.. |
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Semiconductor (Reissue) $14.99 Semiconductor (Reissue) |
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Shoebox Holography: A Step-By-Step Guide to Making Holograms Using Inexpensive Semiconductor Diode Laser $22.03 No Synopsis Available |
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A Biased Biography: Mine $20.24 Come on in and share in the full history of a displaced, but not misplaced, rebel. David Martin Davis was born and reared in North Carolina, migrated to Ohio after World War II and lives peaceably among the Yankees of Springfield. He enjoyed, and you can enjoy, five professionsvisual communication engineer, artist, writer, editor and publisherand three careers, practicing in the United States Air Force (secrets and all); the Springfield, Ohio Art Center, curator and publicist; and Graphic Paper Products Corporation, producer of study aids for high school and college.This is mainly a book for childrenhis. And for you and yours also, if you share in the idea of the main true story, that hard work and dedication are their own reward. Also included are vignettes of people important in his life and memories that have persisted. Ups and downs are part of everyones life, as well as spans of time that are neither, but the ordinary tenor of things. In the bad parts there is only one way to survivekeep your head down and keep digging. Simply, the absence of the bad boosts most of the rest of life to a pleasant plateau. Author: Davis, David Martin Binding Type: Paperback Number of Pages: 172 Publication Date: 2004/10/15 Language: English Dimensions: 9.00 x 6.00 x 0.40 inches |
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Biased Embryos and Evolution $195.94 Aimed primarily at a general readership and college students of biology, this book focuses on the question of how embryonic development changes in the course of evolution, thus giving rise to new types of creatures. It takes the view that biases in the ways that embryos can be altered are as important as natural selection in determining the directions that evolution has taken, including the one that led to the origin of humans. Author: Arthur, Wallace Binding Type: Hardcover Number of Pages: 248 Publication Date: 2004/05/27 Language: English Dimensions: 6.00 x 9.02 x 0.69 inches |
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pn junction
I need help in this question about electricity!?
The circuit in this figure : http://yfrog.com/f131129597p is designed to investigate the I-V characteristics of a semiconductor diode. It is powered by a 12 v batter XY.
i) What is the polarity of end Y of the battery when the diode is forward biased ?
ii) Explain the function of the fixed 10 ohm resistor in the circuit.
iii) Explain the procedure used to obtain data to draw an I-V graph when the diode is forward biased. Give some information about the range of readings to be taken.
iv) Explain how the graph suggests that the diode can maintain a constant pd across it for a current greater than a certain value.
v) What changes must be made to the circuit to investigate the diode's reverse characteristics ?
vi) Describe a practical use for a single diode.
Can someone help me please ? -- Will give best answer !
i) What is the polarity of end Y of the battery when the diode is forward biased ?
negative terminal of battery
ii) Explain the function of the fixed 10 ohm resistor in the circuit.
limit maximum current to diode
iii) Explain the procedure used to obtain data to draw an I-V graph when the diode is forward biased. Give some information about the range of readings to be taken.
Take voltmeter and ammeter reading for different setting of rheostat.
The voltmeter reading is about 0.7V. It is slightly higher for larger ammeter reading.
Maximum ammeter reading is less than 1.13A.
iv) Explain how the graph suggests that the diode can maintain a constant pd across it for a current greater than a certain value.
The graph is a steep positive slope at the point near V = 0.7V. Below 0.7V, the graph is nearly horizontal.
v) What changes must be made to the circuit to investigate the diode's reverse characteristics ?
Reverse the polarity of battery, voltmeter (if analogue type) and ammeter (if analogue type).
vi) Describe a practical use for a single diode.
Diode conducts electric current in one direction only. A practical use is to convert a AC voltage to DC voltage.
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