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Pin Diode Quantum Efficiency
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Simulation of Ingan Blue Laser Diode $172.06 In this book, the design of InGaN LDs structures including multi quantum wells (MQWs) active region device are described and investigated by integrated system engineering technology computer aided design (ISE TCAD) device simulator. The parameters of the LDs structures are varied and optimized for high performance. This optimization study involves aspects such as thickness of active region, doping, thickness of stopper layer region, thickness of quantum wells and quantum barriers, number of quantum wells and several approaches to improve and achieve high efficiency, low threshold current and high output power of InGaN LDs. The basic LDs structures treated here are FabryPerot type InGaN double heterostructure (DH), separate confinement heterostructure (SCH) and multi quantum wells (MQWs).High performance LD has been obtained by using multi quantum wells incorporated with the optimized parameters. The lowest threshold current, higher external quantum efficiency and characteristic temperature are obtained when the number of InGaN well layers is two, at our laser emission wavelength of 415 nm, which is related to the problem of inhomogeneous carrier. Author: Thahab, Sabah Binding Type: Paperback Number of Pages: 232 Publication Date: 2011/01/31 Language: English Dimensions: 5.98 x 9.00 x 0.53 inches |
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Quantum Efficiency in Complex Systems (Hardcover) $499.29 Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series` tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.Written and edited by internationally renowned expertsRelevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry |
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Quantum $9.49 Quantum |
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Quantum Efficiency in Comples Systems: Biomeolecular Systems $205.43 No Synopsis Available |
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Quantum Circuit Complexity $101.96 After decades of unhindered progress, classical computing has started facing significant hurdles both in terms of physical scalability and theoretical bounds of efficiency. Among the alternative models of computing, Quantum Computing, though proposed six decades ago, has recently started seeing potentials to progress beyond the limits of classical computing. This book discusses the theoretical bounds on the efficiency of low depth quantum circuits, one of the structurally simplest models of quantum computing. Three different properties are explored; universality in which one circuit can be used to simulate different circuits, fault detection in which certain kinds of faults in simple quantum gates can be detected and third, a fundamental theoretical limitation in the power of a popular quantum gate. These properties give us a better idea about simple quantum circuits, which are essentially building blocks for more complicated gadgets. The properties are analysed using novel techniques which will be useful to analyse other similar quantum circuits. Overall, this book will be useful to researchers of quantum circuit complexity and graduate students of theoretical computer science. Author: Bera, Debajyoti Binding Type: Paperback Number of Pages: 120 Publication Date: 2010/07/29 Language: English Dimensions: 5.98 x 9.01 x 0.28 inches |
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Physics of Quantum Well Devices $173.65 The book deals with the physics, operating principles and characteristics of the important quantum well devices, namely, the High Electron Mobility Transistor (HEMT), Resonant Tunneling Diode (RTD), Quantum Well Laser (QWL), Quantum Well Infrared Photodetector (QWIP), Modulator and Switch. The basic physical concepts on which these devices are based are discussed in detail with necessary diagrams and mathematical derivations. The growth of heterostructures, theories and experiments on band offset, theories and experimental results on electron states, optical interaction phenomena, and electron transport are discussed as the background material. Practical aspects and uptodate developments and applications of the devices are also covered. This book will be of interest to researchers and specialists in the field of Solid State Technology, Optics and Optoelectronics. It can also serve as a textbook for graduate students and new entrants in the exciting field of quantum electronics. This book takes the reader from the introductory stage to the advanced level of the construction, principles of operation, and application of these devices. Author: Nag, B. R. Series Title: SolidState Science and Technology Library Series Number: 7 Binding Type: Paperback Number of Pages: 312 Publication Date: 2001/11/30 Language: English Dimensions: 9.26 x 6.14 x 0.65 inches |
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DIODE $12 When these electrical items fail there is little choice but to renew - With this genuine Suzuki par.. |
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Pyle LAN Tester,Multimeter and Diode Tester $110.8 2 in 1 LAN Tester and Multimeter with Voltage, Current, Resistance, Continuity, and Diode Tester Tests Pin Configuration for 10 Base-T, 10 Base-2, RJ45/RJ11, 356A, TIA-569A/568B and Token Ring Cable Remotely Test Cables Up to 330 Yards Away Test Ground Wire Measure DC/AC Voltage, DC/AC Current, Resistance, Continuity, and Diode DC Voltage: Max Range 600 V, Accuracy +/- 0.5% AC Voltage: Max Range 600 V, Accuracy +/- 1.2% DC Current: Max Range 200 mA, Accuracy +/- 1.2% AC Current: Max Range 200 mA, Accuracy +/- 2.0% Resistance: Max Range 20 MO, Accuracy +/- 0.8% Continuity Test: Beeps If Less Than 100 O Accessories Included: Test Leads, LANtest Remote Terminator, 9V Battery, Carrying Case Dimensions: 6.38" H x 2.93" W x 1.73" D Weight: 10.86 oz. |
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