Diode Junction Voltage Temperature

1. A silicon pn junction diode at T=300kelvin has a reverse-saturation current of Is=10^-3A. The diode is?

forward-biased with a resulting current of 1mA. Determine Vd.
2. Use a computer simulation to generate the current-voltage characteristics of a diode with Is=10^-12 at temperature of a. T=0degrees b. T=75degrees celsius.

Shockley diode equation:
If = Is * (e^[qV/kT] - 1)

If is the forward current
Is is the saturation current
V is the forward voltage across the diode.
q is the charge on an electron : 1.602E-19 Coulomb
k is Boltzmanns constant: 1.38065 Joules/Kelvin
T is 300 Kelvin

q/kT = 38.7

0.001 = 0.001*(e^[V*38.7] - 1)
V = 18 mV

For question 2, simply use Microsoft Excel and set up an array of voltages starting with negative voltages, increasing into positive values in Column A, then in column B use the Shockley equation and calculate the corresponding current fir each voltage in col. A.
Then plot columns A and B in an X-Y scatter plot.
Repeat for the 2 different temperatures.

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are voltages accross junction diodes independent of temperature?

i mean we know that silicon diode has 0.7V voltage drop is it varies with the temperature?

It changes. Its fairly linear, and can be used as a temperature sensor. Unfortunately, the voltage varies from one diode to another, so you have to calibrate each diode. The slope is pretty repeatable, if I recall correctly, its pretty close to 2mV/degree C for silicon p-n junctions.

We used this property to measure semiconductor package thermal resistance back in the 1980's.